RF GaN Technology Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2015 - 2023

Albany, NY -- (SBWire) -- 04/13/2016 --The growing need for high-frequency, high-power transistors, combined with the massive demand for wireless telecommunications, is the key factor driving the global radio frequency gallium nitride (RF GaN) technology market. In a report titled "RF GaN Technology Market- Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2015 – 2023," Transparency Market Research explores the nuances of the global market and highlights the major forces driving and inhibiting the RF GaN technology market. This comprehensive study serves as an invaluable tool for stakeholders as well as players within the market.

Gallium nitride, a bandgap semiconductor, offers several advantages such as an extremely high breakdown voltage, high electron mobility, and saturation velocity. Ideal for high-power and high-temperature microwave applications such as RF power amplifiers and high-voltage switching devices, GaN technology also offers the benefit of greater operating voltage, crack resistance, higher operating temperature, increased power density, and enhanced durability. For a very long time, GaN-based devices were affordable only to the military in applications such as the development of electronic warfare and creating high-security communications systems. Today, however, GaN technology finds widespread application in a number of commercial sectors thanks to the reduced cost of GaN-based devices, brought on by the cheaper substrates, the improvement in material and yield, and the expansion of wafers.

Compared to other semiconductors such as silicon (Si) and gallium arsenide (GaAs), GaN is a comparatively new technology. However, it has already emerged as the most preferred technology for applications that require high end-power levels such as radar, communications, base transceiver stations, and satellite electronic warfare. This technology also offers high power to transmit signals over long distances. All these factors are likely to drive the RF GaN technology market over the coming years.

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The research report employs the Porter's five forces model to shed light on the bargaining power of buyers and suppliers, the threat of new entrants and substitutes, and the degree of competition among key players. The report also discusses the value chain, supply chain, and industrial landscape of the global RF GaN technology market, to give readers a clearer understanding of the structure of the overall market.

Fujitsu Ltd., Covalent Materials, Freescale Semiconductors Incorporated, RF Micro Devices Inc, WIN Semiconductors, Sumitomo Electric Devices Innovation, International Rectifier Corporation, NGK Insulators, GaN Systems Inc., and Suzhou Jiangzhan Semiconductor are some of the leading companies vying for the top spot in the global RF GaN technology market. These players have been evaluated in the report in an in-depth section dedicated to the vendor landscape of the GaN technology market. Prominent players are identified and profiled based on aspects such as company overview, recent developments, business strategies, and product portfolio. With the help of a SWOT analysis, the report discusses the strengths, weaknesses, opportunities, and threats of the major companies at length.

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