GaN Semiconductor Devices Market - Growing Need for Power Efficient Semiconductor Devices

Gallium Nitride (GaN) is a wide band gap semiconductor material. Owing to its electrical properties such as saturation velocity and high breakdown voltage, GaN is an ideal choice for high power applications in high voltage switching devices such as RF power amplifiers.

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Albany, NY -- (SBWire) -- 09/07/2016 --Gallium Nitride is a hard material that contains various chemical properties owing due to which it finds its suitability for manufacturing of semiconductor devices. Currently GaN semiconductor device market is facing a stiff competition from SiC semiconductor devices. Popularity of GaN semiconductor devices is expected to increase with the growing application areas of GaN semiconductor devices. Emergence of new technologies and rising application areas are the major drivers of this market. GaN semiconductor devices pose a huge opportunity in electric and hybrid electric vehicles. However, costlier industrial process is the major issue of this market.

The objective of this report is to find, analyze, and provide growth forecasts for GaN Semiconductor Devices for types such as power semiconductors and opto semiconductors. Additionally, this report analyzes and provides growth forecasts for GaN Semiconductor Devices for various applications such as computer, ICT (Information and Communication Technology), automotive, military, aerospace, defense, consumer electronics and medical among others. This research report provides thorough analysis of the global GaN Semiconductor Device market based on its product types, applications, and geographies for the period from 2013 to 2019. It provides complete outlook of major drivers, restraints, and opportunities behind the popularity and growth of GaN Semiconductor Devices.

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Different application segments covered under this research study are defined as follows:

Computer sector: This application segment covers GaN semiconductor devices used for computer hardware power modules and UPS systems

ICT sector: This application segment covers GaN semiconductor devices used for signal amplifiers and switching systems, wireless applications, wired communication devices, satellite communication, radar applications and RF applications

Automotive sector: This application segment covers GaN semiconductor devices used for Electric Vehicles (EVs) and Hybrid Electric Vehicles (HEVs), automotive braking systems and rail traction

Military, aerospace and defense: This application segment covers GaN semiconductor devices used in combat vehicles, ships and vessels, microwave radiation applications, and electronic warfare communication

Consumer electronics: This application segment covers GaN semiconductor devices used in inverters, LED lightings, and switch mode consumer power supply system

Medical: This application segment covers GaN semiconductor devices used in implantable medical devices and biomedical electronics

Others: This application segment covers GaN semiconductor devices used in industrial, power, wind and solar sectors

In terms of geographical distribution, the global GaN semiconductor devices market has been classified into four regions, namely, North America, Europe, Asia-Pacific and Rest of the World (RoW). This section includes market revenue (2011 – 2019) and forecast (2013 – 2019) in terms of USD million. The study further offers recommendations and highlights of the market, which would be useful for the present and new market players to sustain and grow in the global human reproductive technologies market

In addition, the report covers company profiles of key players in the market, their recent developments and business strategies. Key players in the market were identified through secondary research while formulating the industry value chain and their market revenue was determined through primary and secondary research. Some of the major players profiled in the report are Fujitsu Limited (Japan), GaN Systems Inc (Canada), Freescale Semiconductors Incorporated (U.S.), International Rectifier Corporation (U.S.), and RF Micro Devices Inc. (U.S.) among others.

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Moreover, the report helps in better understanding of the market with the help of various highlights on the competitive situation across different levels of the value chain and Porter's five forces analysis. In all, the report provides a detailed analysis of the global GaN Semiconductor Device market along with the forecast in terms of revenue (USD million) for all the segments from 2013 to 2019.

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