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Gallium Nitride (GaN) Semiconductor Device Market Size Soaring at 6.2% to Reach $29.2 Billion in 2025

This report provides in-depth study of Global Gallium Nitride Semiconductor Device Market using SWOT analysis i.e. Strength, Weakness, Opportunities, and Threat to the organization

 

Pune, India -- (SBWIRE) -- 09/06/2019 -- The Global Gallium Nitride (GaN) Semiconductor Device Market report also provides an in-depth survey of key players in the market organization.

Global Gallium Nitride (GaN) Semiconductor Device Market Overview:

The Global Gallium Nitride Semiconductor Device Market to reach 29.2 Billion US$ by the end of 2025. The Global Gallium Nitride (GaN) Semiconductor Device Market valued approximately 17.01 US$ Billion in 2016 is anticipated to grow with a healthy growth rate of more than 6.2% over the forecast period 2017-2025.

As per the market report analysis, rising use of Laptops, TVs and mobile phones and other gadgets, growing need of low power consuming electronic appliances, demand for radio frequency in power electronics, energy efficiency in consumer goods, rising use of electric vehicle are the major factors which are driving the Global Gallium Nitride (GaN) Semiconductor Device Market. The Gallium Nitrite is basically a semiconductor that is used in the manufacturing of LEDs, power devices and high radio frequency devices.

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A Gallium Nitride (GaN) Semiconductor has several benefits over silicon-based devices such as its operating temperature is very high, low resistance, high breakdown voltage and high-speed switching capacity that make it a good alternative to silicon technology. With the use of Gallium Nitride, the production cost of integrated circuits has reduced. The Gallium Nitride (GaN) Semiconductors are being used in transistors, amplifiers, diodes, switching systems, inverters and lighting industries.

The use of Gallium Nitride (GaN) Semiconductor is growing in Defense, aerospace application and healthcare sector. The use of gallium nitride semiconductor devices are growing in various industries like consumer electronics, automotive, industrial and telecommunication and the rising use of an electric and hybrid vehicle are setting new prospects in the overall growth of the Gallium Nitride (GaN) Semiconductor Market. However, the overall manufacturing cost of GaN semiconductor is very high as compared to silicon-based semiconductor and it is a reason for obstruction of Global Gallium Nitride (GaN) Semiconductor Device Market.

In terms of the geographic analysis, North America is the leading region across the world in terms of market share. Whereas, owing to the countries such as China, Japan, and India, Asia Pacific region is anticipated to exhibit higher growth rate over the forecast period 2018-2025.

Purchase this report online with 80 Pages, List of Tables & Figures and in-depth Table of Contents on "Global Gallium Nitride (GaN) Semiconductor Device Market Report 2018" @ https://www.businessindustryreports.com/buy-now/108059/single .

Latest Industry News:

1 Mitsubishi Electric Corporation (August 27, 2019) – Mitsubishi Electric to Launch Super mini DIPIPM Ver.7 – Mitsubishi Electric Corporation announced today the coming launch of a new high-performance intelligent power module (IPM), the Super mini DIPIPMTM Ver.7, featuring reduced radiation noise and low power consumption for the inverter drive systems of air conditioners and other small-capacity motor drives. Sales of the Super mini DIPIPM Ver.7 will begin on October 29.

2 Mitsubishi Electric Corporation (August 6, 2019) – Mitsubishi Electric to Launch MelDIR Thermal Diode Infrared Sensor – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch the Mitsubishi Electric Diode InfraRed sensor (MelDIR), a thermal sensor for applications in the fields of security, heating, ventilation and air conditioning (HVAC) and smart buildings, on November 1. MelDIR accurately distinguishes between humans and other heat sources and enables the identification of specific human behavior, such as walking, running or raising hands. It delivers high-pixel, high-thermal-resolution images using thermal diode infrared sensor technology that Mitsubishi Electric developed for the Advanced Land Observing Satellite-2 "DAICHI-2" (ALOS-2).

Major Key Players:

1 Cree

2 Samsung

3 Infineon

4 Qorvo

5 MACOM

6 Microsemi Corporation

7 Analog Devices

8 Mitsubishi Electric

9 Efficient Power Conversion

10 GaN Systems

11 Integra Technologies

12 Navitas Semiconductor and More..........

Market segment by Regions/Countries, this report covers

1 North America

2 Europe

3 Asia Pacific

4 Latin America

5 Rest of the World

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Major Points in Table of Contents:

Global Gallium Nitride (GaN) Semiconductor Device Market Report 2018

1 Global Gallium Nitride (GaN) Semiconductor Devices Market Definition and Scope

2 Research Methodology

3 Executive Summary

4 Global Gallium Nitride (GaN) Semiconductor Devices Market Dynamics

5 Global Gallium Nitride (GaN) Semiconductor Devices Market, By Device Type

6 Global Gallium Nitride (GaN) Semiconductor Devices Market, By Wafer Size

7 Global Gallium Nitride (GaN) Semiconductor Devices Market, By Application

8 Global Gallium Nitride (GaN) Semiconductor Devices Market, By Vertical

9 Global Gallium Nitride (GaN) Semiconductor Devices Market, by Regional Analysis

10 Competitive Intelligence

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