Pune, India -- (SBWIRE) -- 03/02/2019 -- The gallium nitride (GaN) semiconductor devices Industry Report 2019 is an in depth study analyzing the current state of the GaN Market. It provides brief overview of the market focusing on definitions, market segmentation, end-use applications and industry chain analysis. The study on gallium nitride (GaN) semiconductor devices market provides analysis of China market covering the industry trends, recent developments in the market and competitive landscape. Competitive analysis includes competitive information of leading players in China market, their company profiles, product portfolio, capacity, production, and company financials. In addition, report also provides upstream raw material analysis and downstream demand analysis along with the key development trends and sales channel analysis. Research study on gallium nitride (GaN) semiconductor devices market also discusses the opportunity areas for investors.

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The player profiled in the report includes Transphorm Inc., Avogy, Inc., NXP Semiconductors N.V., Fujitsu Limited, Cree Inc., Renesas Electronics Corporation, GaN Systems Inc., Toshiba Corporation, Nichia Corporation and Efficient Power Conversion Corporation among others. Mergers and acquisitions for innovation and new product development and partnership for enhancing product quality are some of the major strategies followed by leading players in this market to sustain market competition.

Market Segmentation

Market By Product Type
Power Semiconductors
Schottky Diode
High Electron Mobility Transistors (HEMTs)
Integrated Circuit (IC)
Radio Frequency Devices
Opto Semiconductors

Market By Wafer Size
2 Inch
4 Inch
6 Inch
8 Inch

Market By Application
Information and Communication Technology
Consumer Electronics
Defense and Aerospace
Automotive
Others

Market By Geography
North America
U.S.
Canada
Mexico
Europe
UK
Italy
France
Germany
Rest of Europe
Asia-Pacific
China
India
Japan
Rest of Asia-Pacific
Rest of the World (RoW)
Latin America
Middle East
Africa

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Segment Overview

North America was the largest market for GaN semiconductor devices in 2015 and accounted for over 30% share of the total market owing to the growth from military and defense applications. Also, growing use of GaN in consumer electronic devices such as personal computers, laptops, televisions, mobile phones, tablet PCs, etc. due to its power efficiency is driving the growth of this market in the region. Various manufacturers in the region are focusing on innovating new products that are power efficient and low cost, thus creating the future growth potential for GaN semiconductor based devices in North America.

Asia-Pacific is the fastest growing market for GaN semiconductor devices, with the growth majorly coming from China. China accounted for majority of share in Asia-Pacific GaN semiconductor devices market in 2015, fuelled by the demand from consumer electronics sectors, most importantly from the mobile, communication and computing segments. Also, high performance GaN based transistors are likely to drive the growth of telecommunication sector in Asia-Pacific. The overall electronics market is expanding at a rapid pace in countries such as China and India for meeting the growing local demand. Therefore, these countries are expected to be the potential markets for GaN semiconductor devices. The growth in cloud computing is also set to boost new power architectures in datacenters. Thus, owing to the huge availability of skilled workers and raw materials and growing economy, several companies are looking forward to shift their manufacturing units in the APAC. Considering all the above mentioned factors, the GaN semiconductor devices market is expected to witness steady growth throughout the forecast period.

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