Harrisburg, NC -- (SBWIRE) -- 10/21/2020 -- The GaN Semiconductor Device Market report is a compilation of first-hand information, qualitative and quantitative assessment by industry analysts, inputs from industry experts and industry participants across the value chain. The report provides an in-depth analysis of parent market trends, macro-economic indicators and governing factors along with market attractiveness as per segments. The report also maps the qualitative impact of various market factors on market segments and geographies. We analyzed the impact of COVID-19 (Corona Virus) on the product industry chain based on the upstream and downstream markets, on various regions and major countries and on the future development of the industry are pointed out.
GaN belongs to this category of semiconductors, particularly suitable for power applications due to its superior characteristics compared to silicon: specifically, its ability to switch faster internally when operated at the same operating frequency as Si or SiC. , lower internal switching losses from its superior electron mobility which is 2x higher, , higher operating frequencies from its lower parasitic inductances especially in soft switching topologies, higher working voltage for a given size of die based on its higher critical electric field strength (3.3 MV/cm) versus 0.3 MV/cm with silicon all resulting in higher efficiency. Due to its chemical-physical properties and to highly reliable manufacturing processes, silicon has been for many years the most used semiconductor for manufacturing passive and active electronic components.
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Top Leading Companies of Global GaN Semiconductor Device Market are Efficient Power Conversion, Toshiba, Cree, NXP Semiconductors, Texas Instruments, NTT Advanced Technology, Infineon Technologies, OSRAM, Panasonic, GaN Systems and others.
Industry News and Updates:
STMicroelectronics and TSMC Collaborate to Accelerate Market Adoption of Gallium Nitride-Based Products
Geneva, Switzerland and Hsinchu, Taiwan R.O.C., February 20, 2020 – STMicroelectronics (NYSE:STM), a global semiconductor leader serving customers across the spectrum of electronics applications, and TSMC (TWSE:2330, NYSE: TSM), the world's largest dedicated semiconductor foundry, are collaborating to accelerate the development of Gallium Nitride (GaN) process technology and the supply of both discrete and integrated GaN devices to market. Through this collaboration, ST's innovative and strategic GaN products will be manufactured using TSMC's leading GaN process technology.
GaN is a wide bandgap semiconductor material which offers significant benefits over traditional Silicon-based semiconductors for power applications. These benefits include greater energy efficiency at higher power, leading to a substantial reduction in parasitic power losses. GaN technology also allows the design of more compact devices for better form factors. Additionally, GaN-based devices switch at speeds as much as 10X faster than Silicon-based devices while operating at higher peak temperatures. These robust and intrinsic material characteristics make GaN ideally suited for broad-based adoption in evolving automotive, industrial, telecom, and specific consumer applications across both the 100V and the 650V clusters.
Specifically, Power GaN and GaN IC technology-based products will enable ST to provide solutions for medium and high-power applications with better efficiency compared to silicon technologies on the same topologies, including automotive converters and chargers for hybrid and electric vehicles. Power GaN and GaN IC technologies will help accelerate the megatrend of the electrification of consumer and commercial vehicles.
Toshiba's Cascode GaN Discrete Power Device Realize Stable Operation and Simplifies System Design with Direct Gate Drive
September 30, 2020 – TOKYO--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed a gallium nitride (GaN) cascode with a direct gate drive that realizes stable operation and simplification of system design. The device reduces risk of additional energy loss during switching due to false on, and like silicon its switching speed can be easily adjusted, an important consideration in the design of power electronics systems. Details of the new discrete device were reported at the IEEE-sponsored International Symposium on Power Semiconductor Devices and ICs 2020 (ISPSD 2020), held online.
GaN power devices are candidates for achieving high efficiency and downsizing systems. They are currently used in quick chargers for smartphones and computers, and are expected to be adopted in the power supply of industrial equipment and servers. Generally, power devices need to be normally-off, but GaN high-electron-mobility transistors (HEMTs) are normally-on. GaN transistors used for power conversion can be classified into cascode and p-GaN gate types. The cascode type is combined with a GaN HEMT and low voltage silicon MOSFET in a single package. The p-GaN gate type uses a p-GaN gate to make GaN HEMTs normally-off.
Toshiba's new GaN cascode is less susceptible to noise, a source of malfunction, as it has a higher threshold voltage than p-GaN gate normally-off HEMT devices. It also does not require designated driver ICs.
On The Basis Of Product, The GaN Semiconductor Device Market Is Primarily Split Into
Power Semiconductors
Opto Semiconductors
RF Semiconductors
On The Basis Of End Users/Application, This Report Covers
Automotive
Consumer Electronics
Aerospace & Defense
Healthcare
Information & Communication Technology
This report focuses on GaN Semiconductor Device volume and value at the global level, regional level and company level. From a global perspective, this report represents overall GaN Semiconductor Device market size by analyzing historical data and future prospect. Regionally, this report focuses on several key regions: North America, Europe, China and Japan etc.
This allows understanding of the market and benefits from any lucrative opportunities that are available. Researchers have offered a comprehensive study of the existing market scenario while concentrating on the new business objectives. There is a detailed analysis of the change in customer requirements, customer preferences, and the vendor landscape of the overall market.
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Following are major Table of Content of GaN Semiconductor Device Industry:
- GaN Semiconductor Device Market Sales Overview.
- GaN Semiconductor Device Market Sales Competition by Manufacturers.
- GaN Semiconductor Device Market Sales Analysis by Region.
- GaN Semiconductor Device Market Sales Analysis by Type.
- GaN Semiconductor Device Market Analysis by Application.
- GaN Semiconductor Device Market -Manufacturers Analysis.
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