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Next-Generation Memory Market: Global Industry Analysis, Segments, Top Key Players, Drivers and Trends by Forecast to 2022

Next-generation Memory Market Research Report by Forecast to 2022


Pune, India -- (SBWIRE) -- 02/09/2018 -- Global Next Generation Memory Market Overview:
Next generation memory can be defined as a common label applied to a major upgrade of hardware or a software product. The next generation memory market has grown over the last few years because of the increasing demand for faster, efficient and cost effective memory solutions. These memory solutions are used across various verticals. Magnetoresistive Random Access Memory (MRAM) is a potentially revolutionary technology in the manufacturing of microelectronic devices. It stores information by using electron spin through creation of tiny magnetic fields at junctions in a two-dimensional array.

MRAM effectively acts like a static random access memory chip (SRAM), except that it is non-volatile memory. This technology can replace multiple kinds of memory within an electronic device, providing an instant-on architecture for less cost, and generally consumes less power to operate. It also has one other advantage-it is unaffected by high radiation levels and extreme temperatures, making it extremely useful for space and Defense applications.

The key drivers contributing to the growth of the Next-Generation Memory Market are power efficiency, intrinsic benefit with non-volatile memories, high growth in the wearable electronics industry, technological advancements for storage, rise in the usage of next generation memory in smart phones, increasing adoption of MRAM & PCM memory and enterprise storage.

High cost for emerging memory chips and lack of stability under extreme environment conditions, are factors that are expected to restraint growth of the global next-generation memory market during the forecast period.

Major Key Players:
Toshiba Corporation (Japan), SK Hynix Semiconductor, Inc. (South Korea), Adesto Technologies Corporation, Inc. (U.S.), Fujitsu Ltd. (Japan), IBM Corporation (U.S.), SanDisk Corporation (U.S.), Samsung Electronics Co., Ltd. (South Korea), Intel Corporation (U.S.), Micron Technology, Inc. are some of the prominent players profiled in MRFR Analysis and are at the forefront of competition in the Global Next Generation Memory Market.

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Industry News:

January, 2018 - Samsung has started mass producing the industry's first 16-gigabit (Gb) Graphics Double Data Rate 6 (GDDR6) memory, which will find its way into next-generation graphics cards and various other products. The new graphics memory is built on a 10nm-class manufacturing process, emphasis on class. That refers to anything between 10nm and 19nm.

February, 2018 - Arm announced the release of the next generation of AMBA 5 ACE5 and AXI5 protocols. A number of capabilities have been added over the prior AMBA 4 generation to align with AMBA 5 CHI. The protocols have been implemented in Arm's latest technology including DynamIQ processers such as Cortex-A75 and Cortex-A55 along with the CoreLink CMN-600 Coherent Mesh Network.

February, 2018 - Softing Inc. introduced the eATM tManager Series B, in-chassis ControlLogix PLC module, the latest advancement in connectivity solutions. tManager allows Rockwell Automation ControlLogix PLCs to connect to a Microsoft SQL database to download recipes for automating production changes or upload production metrics for monitoring and optimizing processes. tManager is one of many connectivity solutions offered by Softing including OEM engineering development toolkits, PLC in-chassis modules, DIN rail gateways, and server-based connectivity solutions

Global Next Generation Memory Market Competitive Analysis:
The Market of next generation memory appears to be highly competitive. To maintain their market position and to drive the market growth, various dynamic and diversified international organizations, domestic organizations and as well as new entrants form a competitive landscape. Market leaders are innovating continuously and increasingly seeking market expansion through various strategic mergers and acquisitions, innovation, increasing investments in research and development and cost-effective product portfolio.

Major players are investing on internal R&D and, most of all, in acquiring other firms. Prominent vendors of micro-chips are targeting to invest more in technology and research and development activities to innovate their already existing products. The rising government funding is also expected to motivate key companies to invent new electronic components that match the changing trends and needs across the globe.

Global Next Generation Memory Market Segmentation:
The next generation memory Market can be segmented in to 4 key dynamics for the convenience of the report and enhanced understanding;

Segmentation by technology: Comprises Non-volatile Memories (Phase Change Memory, Magneto-Resistive Random Access Memory (MRAM), Resistive Random Access Memory (Re RAM), Ferroelectric RAM (FeRAM)), Volatile Memories (Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM)

Segmentation by Application: Comprises Consumer Electronics, enterprise storage, automotive and transportation, military and aerospace, telecommunications and many more.

Segmentation by wafer size: Comprises 200mm, 300mm, 450mm.

Segmentation by Regions: Comprises Geographical regions - North America, Europe, Asia Pacific and Rest of the World.

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Global Next Generation Memory Market Regional Analysis:
Regionally, North America accounted for the largest market share, majorly due to high investments for technologically advanced products and increasing adoption of MRAM, DRAM and PCM memory. The market for next-generation memory in Asia-Pacific is expected to account for the largest share by 2022. This growth is attributed to increasing demand for mobile phones and computers. In Asia-Pacific, emerging economies such as India and China are manufacturing hubs for consumer electronic products, including smartphones, home appliances, and televisions.

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