Next generation memory technologies include emerging memory solutions that have been introduced in the market in the recent past or are expected to be launched during the period 2013 to 2019.
Albany, NY -- (SBWIRE) -- 12/07/2016 -- Emerging memory solutions that have been recently introduced or are likely to be unveiled in the market during the report's forecast period are called next generation memory technologies. These memory technologies compete with their precursors such as SRAM, DRAM, and flash on the basis of cost, speed, and scalability. These are evolving technologies and are witnessing increasing interest from several prominent enterprises in the market across various product categories.
While the precursors to next generation memory solutions have come a long way, the industry is now looking forward to sophisticated alternatives enabling it to reduce power consumption and increase density in a completely new architecture. This has encouraged the exploration of newer memory solutions, which subsequently boosts the market for next generation memory technologies.
According to the report, the global market for next generation memory technology, which stood at US$207.8 mn in 2012, is anticipated to exhibit a robust CAGR of 46.1% from 2013 to 2019. Emerging memory technologies are gaining much impetus in the market since they offer better speed and scalability.
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Over the last couple of years, the market is witnessing an increasing uptake of non-volatile emerging solutions, compared to volatile memory technologies. This is mainly due to the inherent benefits of the former in retention of data without needing power. In 2012, MRAM (magneto-resistive RAM), FeRAM (ferroelectric RAM), and PCM (phase change memory) accounted for a significant share in the market among non-volatile memories. Other memory technologies available in the market include CBRAM (conductive bridging RAM) and ReRAM (resistive RAM). Due to the increasing adoption of PCM and MRAM memory, the segment of enterprise storage and cache memory is anticipated to emerge as the largest segment of the market based on application.
The most common interface technologies deployed across the memory market include SATA (serial ATA), double data rate (DDR) interface, PCIe (peripheral component interconnect express), SAS (serial attached small computer system interface), and I2C (inter integrated circuit). Of these the DDR interface in turn includes LPDDR and DDR 1/2/3/4. DDR interfaces are used in storage options such as solid-state drives (SSDs). Hence, the DDR segment dominated the market in 2012 with a share of 47.6%
Regionally, North America held the largest share in the global next generation memory technologies market, followed by Europe. North America witnesses rising demand for memory technologies that offer faster mobile memory chips at lower cost per pit, which boosts the demand for next generation memory technologies from the region. Asia Pacific is also anticipated to emerge as a lucrative market for next generation memory technologies in the coming years. Growth of this regional market will be accountable to the rising demand from South Korea, China, and Japan.
The TMR report provides an executive-level blueprint of the market, elaborating on the aforementioned snippets of information. To present a holistic overview, it also profiles the leading players operating in the global next generation memory technologies market. Some of the companies profiled in the report are SK Hynix Inc., Micron Technology, Inc., Samsung Electronics Co. Ltd., Avalanche Technology, Inc., Everspin Technologies, Inc., and Fujitsu Ltd. Of these, Fujitsu Ltd. led the market for FeRAM technology in 2012. Everspin Technologies, Inc. emerged as the market leader in the manufacture of MRAM the same year, while Micron Technology emerged as the leader in the PCM market.