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SiC & GaN Power Devices Market: Business Overview, Product Type, Regional Outlook and Forecast Period 2019-2025

QY Research has published the new industry research report focuses on Global major leading players with information such as company profiles, product picture, future road map, opportunities and investment.

 

Los Angeles, CA -- (SBWIRE) -- 05/06/2019 -- Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors. Silicon Carbide (SiC) and gallium nitride (GaN) Power Devices are the mainly used Wide-bandgap semiconductors materials.

Infineon is the largest production Cmpany for SiC & GaN Power Devices, with a production value market share nearly 49.01% in 2016.

SiC & GaN Power Devices used in industry including Consumer Electronics, Automotive & Transportation, Industrial Use and Others. Report data showed that 34.05% of the SiC & GaN Power Devices market demand in Industrial Use, 28.76% in Consumer Electronics in 2016.

There are two kinds of SiC & GaN Power Devices, which are SiC and GaN Power Devices. SiC Power Devices is important in the SiC & GaN Power Devices, with a production revenue market share nearly 91.40% in 2016.

Briefly speaking, in the next few years, SiC & GaN Power Devices industry will be a rapid development industry. Sales of SiC & GaN Power Devices have brought a lot of opportunities, there will more companies enter into this industry, especially in developing countries.

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The global SiC & GaN Power Devices market was 320 million US$ in 2018 and is expected to 3080 million US$ by the end of 2025, growing at a CAGR of 32.5% between 2019 and 2025.

This report studies the SiC & GaN Power Devices market size (value and volume) by players, regions, product types and end industries, history data 2014-2018 and forecast data 2019-2025; This report also studies the global market competition landscape, market drivers and trends, opportunities and challenges, risks and entry barriers, sales channels, distributors and Porter's Five Forces Analysis.

Geographically, this report is segmented into several key regions, with sales, revenue, market share and growth Rate of SiC & GaN Power Devices in these regions, from 2014 to 2025, covering

North America (United States, Canada and Mexico)

Europe (Germany, UK, France, Italy, Russia and Turkey etc.)

Asia-Pacific (China, Japan, Korea, India, Australia, Indonesia, Thailand, Philippines, Malaysia and Vietnam)

South America (Brazil etc.)

Middle East and Africa (Egypt and GCC Countries)

The various contributors involved in the value chain of the product include manufacturers, suppliers, distributors, intermediaries, and customers. The key manufacturers in this market include

Infineon

Rohm

Mitsubishi

STMicro

Fuji

Toshiba

Microsemi

United Silicon Carbide Inc.

GeneSic

Efficient Power Conversion (EPC)

GaN Systems

VisIC Technologies LTD

By the product type, the market is primarily split into

GaN

SiC

By the end users/application, this report covers the following segments

Consumer Electronics

Automotive & Transportation

Industrial Use

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