Los Angeles, CA -- (SBWIRE) -- 12/23/2019 -- Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. Silicon carbide is a semiconductor, which can be doped n-type by nitrogen or phosphorus and p-type by beryllium, boron, aluminium, or gallium. Metallic conductivity has been achieved by heavy doping with boron, aluminium or nitrogen.SiC Substrates is a semiconductor material with unique electrical properties and excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC is more suitable for high temperatureand high power device .SiC Substrates can be supplied in diameter 2 inch , both 4-H or 6-H polytype N-type , Nitrogent doped , and Si face polished. It can be used in GaN epitaxy device, Optoelectronic device, High frequency device, High power device, High temperature device, Light emitting diodes.

Currently, the global SiC wafer market is expensive, but still in short supply, high raw material costs 40 percent more than the price of silicon carbide semiconductor device, silicon carbide wafer price has become the bottleneck of the third-generation semiconductor industry. Thus, using the most advanced SiC crystal growth technology to achieve large-scale production, reduce production costs of silicon carbide wafers, will promote the rapid development of the third generation of the semiconductor industry, expanding market demand.

With SiC crystal growth and device fabrication technology to further improve the technology. The next few years a variety of SiC power electronic devices will get greater improvements in yield, reliability and price. To enter the stage of full promotion applications. This is likely to lead to a new power electronics technology revolution. Thus, the birth and development of SiC power electronic devices is a revolutionary progress in power electronics technology

The main application areas of silicon carbide wafers with LED solid-state lighting and high-frequency devices, the future of mobile phones and laptop backlight market will provide tremendous growth in demand for silicon carbide

The global SiC Substrates market was 170 million US$ in 2018 and is expected to 510 million US$ by the end of 2025, growing at a CAGR of 17.2% between 2019 and 2025.

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Global SiC Substrates Market: Competitive Rivalry

The chapter on company profiles studies the various companies operating in the global SiC Substrates market. It evaluates the financial outlooks of these companies, their research and development statuses, and their expansion strategies for the coming years. Analysts have also provided a detailed list of the strategic initiatives taken by the SiC Substrates market participants in the past few years to remain ahead of the competition.

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Global SiC Substrates Market: Regional Segments

The chapter on regional segmentation details the regional aspects of the global SiC Substrates market. This chapter explains the regulatory framework that is likely to impact the overall market. It highlights the political scenario in the market and the anticipates its influence on the global SiC Substrates market.

- The Middle East and Africa (GCC Countries and Egypt)
- North America (the United States, Mexico, and Canada)
- South America (Brazil etc.)
- Europe (Turkey, Germany, Russia UK, Italy, France, etc.)
- Asia-Pacific (Vietnam, China, Malaysia, Japan, Philippines, Korea, Thailand, India, Indonesia, and Australia)

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Report Highlights

- Comprehensive pricing analysis on the basis of product, application, and regional segments

- The detailed assessment of the vendor landscape and leading companies to help understand the level of competition in the global SiC Substrates market

- Deep insights about regulatory and investment scenarios of the global SiC Substrates market

- Analysis of market effect factors and their impact on the forecast and outlook of the global SiC Substrates market

- A roadmap of growth opportunities available in the global SiC Substrates market with the identification of key factors

- The exhaustive analysis of various trends of the global SiC Substrates market to help identify market developments

Table of Contents

Report Overview: It includes six chapters, viz. research scope, major manufacturers covered, market segments by type, SiC Substrates market segments by application, study objectives, and years considered.

Global Growth Trends: There are three chapters included in this section, i.e. industry trends, the growth rate of key producers, and production analysis.

SiC Substrates Market Share by Manufacturer: Here, production, revenue, and price analysis by the manufacturer are included along with other chapters such as expansion plans and merger and acquisition, products offered by key manufacturers, and areas served and headquarters distribution.

Market Size by Type: It includes analysis of price, production value market share, and production market share by type.

Market Size by Application: This section includes SiC Substrates market consumption analysis by application.

Profiles of Manufacturers: Here, leading players of the global SiC Substrates market are studied based on sales area, key products, gross margin, revenue, price, and production.

SiC Substrates Market Value Chain and Sales Channel Analysis: It includes customer, distributor, SiC Substrates market value chain, and sales channel analysis.

Market Forecast – Production Side: In this part of the report, the authors have focused on production and production value forecast, key producers forecast, and production and production value forecast by type.

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