Global Ferroelectric RAM Market Is Anticipated to Reach 300 Million US$ by 2025, Registering a CAGR of 3%, Says QY Research
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.
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