Power GaN Market Driven by Its Capacity to Prevent Energy Loss
Gallium nitride (GaN), a wide band gap semiconductor material, is a new technology compared to other semiconductor devices, such as gallium arsenide (GaAS) and silicon carbide (SiC). GaN industrial devices offer an advantage with regards to thermal performance, efficiency, weight and size. This wide band gap semiconductor technology has matured rapidly over the years. In fact, Mobility Transistors made of Gallium Nitride High Electron (GaN HEMTs) have been available as commercial off-the-shelf devices since 2005.
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